作者单位
摘要
湖南师范大学物理与电子科学学院, 湖南 长沙 410081
利用传输矩阵法在红外波段实现了基于石墨烯-六方氮化硼(hBN)异质结构的古斯-汉欣(GH)位移的增强和调控。理论研究表明,由于hBN在红外波段产生洛伦兹共振现象,当使用波长为12.20 μm的横磁偏振光入射时,通过调节石墨烯的费米能级或石墨烯层数可以有效增强异质结构的GH位移量。当费米能级为0.2 eV时,仅使用单层石墨烯作用该异质结构即可达到80.97λ的GH位移量;此外,GH位移随hBN厚度的变化规律表现出与hBN介电常数相似的特征。当hBN厚度在1.53 μm附近变化时,可以实现-150λ~150λ范围内的正向或负向GH位移的灵活切换。这些研究结果有助于设计新型高灵敏度红外光学传感器。
材料 古斯-汉欣位移 石墨烯 六方氮化硼 红外波段 
激光与光电子学进展
2020, 57(13): 131601
Author Affiliations
Abstract
1 Department of Electronic Engineering, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China
2 Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433, China
3 School of Physical Science and Technology, Guangxi University, Nanning 530004, China
In this paper, we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells (MQWs) and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λ Fabry-Perot (F-P) cavity with double dielectric distributed Bragg reflectors (DBRs). Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts. The threshold of polariton lasing is about half of the threshold of photonic lasing. Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate (BEC) in nitride semiconductors.
exciton-polariton polariton lasing InGaN QWs 
Opto-Electronic Advances
2019, 2(12): 12190014
Author Affiliations
Abstract
1 School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
2 International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
The optical Tamm state (OTS), which exists generally at the interface between metal and a dielectric Bragg mirror, has been studied extensively in the visible and near infrared spectra. Nevertheless, OTS in the terahertz (THz) region normally receives far less attention. In this Letter, we demonstrate the physical mechanism of OTS at the interface between graphene and a dielectric Bragg mirror in the THz frequency band by applying the transfer matrix method and dispersion characteristics. Based on such mechanisms, we propose an efficient method that can precisely generate and control OTS at a desired angle and frequency. Moreover, we show that the OTS is dependent on the optical conductivity of graphene, making the graphene–dielectric-Bragg-mirror a good candidate for dynamic tunable OTS device in the THz frequency range.
160.4236 Nanomaterials 
Chinese Optics Letters
2019, 17(2): 020008
Author Affiliations
Abstract
1 School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
2 International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
3 Jiangsu Key Laboratory of Advanced Laser Materials and Devices, School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, China
In this Letter, we have shown that a giant Goos–H nchen shift of a light beam reflected at terahertz frequencies can be achieved by using a composite structure, where monolayer graphene is coated on one-dimensional photonic crystals separated by a dielectric slab. This giant Goos–H nchen shift originates from the enhancement of the electrical field, owing to the excitation of optical Tamm states at the interface between the graphene and one-dimensional photonic crystal. It is shown that the Goos–H nchen shift in this structure can be significantly enlarged negatively and can be switched from negative to positive due to the tunability of graphene’s conductivity. Moreover, the Goos–H nchen shift of the proposed structure is sensitive to the relaxation time of graphene and the thickness of the top layer, making this structure a good candidate for a dynamic tunable optical shift device in the terahertz regime.
160.4236 Nanomaterials 
Chinese Optics Letters
2019, 17(2): 020007
Author Affiliations
Abstract
We experimentally demonstrate that a high-power 0.1-THz continuous wave can be generated by external modulation. A low-noise electrical amplifier and a W-band antenna with a gain of 25 dBi are employed to enhance photodiode output power. Detection power exceeds 1 mW when an absolute terahertz power meter is used.
060.5625 Radio frequency photonics 060.4370 Nonlinear optics, fibers 
Chinese Optics Letters
2012, 10(10): 100605

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